EE 2212

PROBLEM SET 6

S. G. Burns

Due: Wednesday, 12 March 2014

Note 1: Problems 3 and 4 are “plug and chug” to help you familiarize yourself with the numbers and units for FETs.

Note 2: Table 4.6 on Page 204 provides useful information if these data are not provided in any of the Chapter 4 problems.

1. This problem is derived from an old quiz. The I-V curves for a Si solar panel are shown below. The area of the solar panel is 0.5 m².

Provide a number for:

(a) V_OC, Open Circuit Voltage___________ and I_SC, Short Circuit Current ________________

(b) Estimate a value for the maximum output power of this panel and illustrate, on the graph, how you obtained this value.

(c) Using a reasonably accepted value for the solar constant, estimate the efficiency of this panel using your results from Part (b).

(d) The solar panel array on the top of Malosky stadium has a peak power generating capability of 5.6 KW. Briefly explain what attributes are required for the interface electronics to connect this array to the power grid.

2. Text 3.123 Sketch the curve manually or use MATLAB, EXCEL or some other function curve program to illustrate your answers. Figure 3.73 should provide some guidance as well as the curve in Problem 1.

3. Text Problems 4.1 and 4.2 and for 4.2, observe that this is Cox, capacitance per unit area. Watch your units. Usually capacitance/cm² are preferred for the capacitance per unit area units. When the text and in the industry talks about an MOS capacitor, they are usually referring to capacitance/unit area. The total capacitance can then be scaled by the W x L product. This idea of scaling is a very important VLSI design concept. The parallel plate basic capacitor model works well!

4. Text 4.4 and 4.8 for NMOS and Text 4.48 for PMOS. Organize your results in a table.

5. From an old quiz. For the indicated bias conditions, state whether the FET is operating in the OHMIC (TRIODE) region, SATURATION region, or CUTOFF region. Explain your reasoning. Assume that |V_T | = 2 volts for both the NMOS and PMOS enhancement mode transistors.

M1 __________ M2 __________ M3 __________

M4 __________ M5 __________ M6 __________

All of these cartoons are relevant my life at UMD.

(1) I have my own coffee pot to avoid issues.

(2) I have a slide rule collection and even know how to use them. Let me know if you want a short course. In their day, prior to the early 70s, slide rules were a great tool to learn about log₁₀ theory and applications.

(3) The iPAD and Macbook are so friendly and the graphics are great, but I can’t find a good SPICE APP.

(4) For those of you who are aware of the current UMD budget issues, the Dilbert cartoon says it all. ENJOY!

Recall the WOM (Write-Only-Memory) Signetics Data Sheet from the attachment to the diode experiment. I think those engineers may have taken a clue from some engineers at EIMAC. The EIMAC division manufactures high power and specialty vacuum tubes used in high power transmitters and RF generators and related. This is a data sheet for the “PHANTASATRON”. EIMAC is now a subsidiary of Communications and Power Industries. Even though small vacumm tubes are no longer made in the U.S., there are some manufacturers in Russia and Brazil catering to the high end audiophile market. Larger, high power transmitting tubes and speciality vacuum tubes are manufactured by EIMAC and others. Enjoy!